Автор туралы ақпарат

Masalsky, N. V.

Шығарылым	Бөлім	Атауы	Файл
Том 53, № 3 (2024)	MODELING	Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate
Том 53, № 5 (2024)	INSTRUMENTATION	Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor
Том 54, № 2 (2025)	NANOTRANSISTORS	Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors