Gallium selenide thin films grown on silicon by plasma-enhanced chemical vapor deposition

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Abstract

Gallium selenide (GaSe) thin films on silicon (111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.

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About the authors

M. A. Kudryashov

Nizhny Novgorod State Technical University; Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: mikhail.kudryashov1986@yandex.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

L. A. Mochalov

Nizhny Novgorod State Technical University; Lobachevsky State University of Nizhny Novgorod

Email: mikhail.kudryashov1986@yandex.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

Y. P. Kudryashova

Nizhny Novgorod State Technical University; Lobachevsky State University of Nizhny Novgorod

Email: mikhail.kudryashov1986@yandex.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

E. A. Slapovskaya

Lobachevsky State University of Nizhny Novgorod

Email: mikhail.kudryashov1986@yandex.ru
Russian Federation, Nizhny Novgorod

References

  1. Grzonka J., Claro M.S., Molina-Sánchez A., Sadewasser S., Ferreira P.J. // Adv. Funct. Mater. 2021. V. 31. № 48. P. 2104965.
  2. Jiang B., Hao Z., Ji Y., Hou Y., Yi R., Mao D. et al. // Light Sci. Appl. 2020. V. 9. № 1. P. 63.
  3. Curreli N., Serri M., Zappia M.I., Spirito D., Bianca G., Buha J. et al. // Adv. Electron. Mater. 2021. V. 7. № 3. P. 2001080.
  4. Urakami N., Nakakura S., Hashimoto Y. // Appl. Phys. Express. 2023. V. 16. № 5. P. 056503.
  5. Tonndorf P., Schwarz S., Kern J., Niehues I., Pozo-Zamudio O. Del, Dmitriev A.I. et al. // 2D Mater. 2017. V. 4. No. 2. P. 021010.
  6. Shevchenko O.N., Mikerin S.L., Kokh K.A., Nikolaev N.A. // Appl. Sci. Sci. 2023. V. 13. № 4. P. 2045.
  7. Castellano A. // Appl. Phys. Lett. 1986. V. 48. № 4. P. 298.
  8. Chang C.-C., Zeng J.-X., Lan S.-M., Uen W.-Y., Liao S.-M., Yang T.-N. et al. // Thin Solid Films. 2013. V. 542. P. 119.
  9. Liu C.-W., Dai J.-J., Wu S.-K., Diep N.-Q., Huynh S.-H., Mai T.-T. et al. // Sci. Rep. 2020. V. 10. № 1. P. 12972.
  10. Sakr G.B. // Mater. Sci. Eng. B. 2007. V. 138. № 1. P. 1.
  11. Mahmoud W.E., Al-Ghamdi A.A., Shirbeeny W., Al-Hazmi F.S., Khan S.A. // Superlattices Microstruct. 2013. V. 63. P. 162.
  12. Elamin A.A., Alsulaim G. // Asp. Min. Miner. Sci. 2023. V. 10. № 5. P. 1188.
  13. Jian S.-R., Juang J.-Y., Luo C.-W., Ku S.-A., Wu K.-H. // J. Alloys Compd. 2012. V. 542. P. 124.
  14. Ohyama M., Fujita Y. // Surf. Coatings Technol. 2003. V. 169-170. P. 620.
  15. Kudryashov M., Mochalov L., Nezdanov A., Kornev R., Logunov A., Usanov D. et al. // Superlattices Microstruct. 2019. V. 128. P. 334.
  16. Usanov D., Nezhdanov A., Kudryashov M., Krivenkov I., Markelov A., Trushin V. et al. // J. Non. Non. Cryst. Solids. 2019. V. 513. P. 120.
  17. Sazanova T.S., Mochalov L.A., Logunov A.A., Kudryashov M.A., Fukina D.G., Vshivtsev M.A. et al. // Nanomaterials. 2022. V. 12. № 11. P. 1838.
  18. Minkov D., Angelov G., Nestorov R., Nezhdanov A., Usanov D., Kudryashov M., Mashin A. // Materials (Basel). 2020. V. 13. № 13. P. 2981.
  19. Mochalov L., Logunov A., Kudryashov M., Prokhorov I., Sazanova T., Yunin P. et al. // ECS J. Solid State Sci. Technol. 2021. V. 10. № 7. P. 073002.
  20. Ruedy J.E., Gibbs R.C. // Phys. Rev. 1934. V. 46. № 10. P. 880.
  21. Erdevdy M., Markush P., Shpenik O., Zvenihorodsky V. // Eur. Phys. J. D. 2015. V. 69. № 1. P. 17.
  22. Smirnov Y.M. // High Temp. 2006. V. 44. № 5. P. 656.
  23. Shirai T., Reader J., Kramida A.E., Sugar J. // J. Phys. Phys. Chem. Ref. Data. 2007. V. 36. № 2. P. 509.
  24. Mansurov V.G., Galitsyn Y.G., Malin T.V., Thijs S.A., Fedosenko E.V., Kozhukhov A.S. et al. // FTP. 2018. V. 52. № 12. P. 1407.

Supplementary files

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2. Fig. 1. Schematic representation of a plasma-chemical installation for the synthesis of thin GaSe films.

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3. Fig. 2. Emission spectra of Ar–Se (1), Ar–Ga (2) and Ar–Ga–Se (3) mixtures.

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4. Fig. 3. Map of the distribution of elemental gallium and selenium on the surface of a film deposited on silicon at a plasma power of 50 W.

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5. Fig. 4. Diffraction patterns of gallium selenide films deposited at different plasma power values.

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6. Fig. 5. SEM images of gallium selenide films deposited at different plasma powers: 30 (a), 50 (b) and 70 W (c). Scale bar 200 nm.

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