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FABRICATION AND STUDY OF THE p − Si/α − Si/Ag MEMRISTOR CROSSBAR ARRAY
- Authors: Samsonova A.1, Yegiyan S.1, Klimenko O.1,2, Antonov V.N.1, Paradezhenko G.1, Prodan D.1, Pervishko A.1, Yudin D.1, Brilliantov N.1
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Affiliations:
- Skolkovo Institute of Science and Technology
- P.N. Lebedev Physical Institute of the Russian Academy of Siences
- Issue: Vol 166, No 2 (2024)
- Pages: 255-260
- Section: Articles
- URL: https://genescells.com/0044-4510/article/view/653845
- DOI: https://doi.org/10.31857/S004445102408011X
- ID: 653845
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Abstract
We study the formation of the conductive channels in α-Si memristors and demonstrate their operation in the crossbar array. The latter can be utilised as the basic component of the neuromorphic chip tailored for edge computing. The conductive channels in α-Si are formed by the migration of Ag along with Cu ions. Such a channel has switching current-voltage characteristics at high bias, Vbias > 2V, and highly non-linear that at low bias, Vbias < 0.5V. Memristor can be re-programmed to different resistance states with short voltage pulses of amplitude above 2 V. We demonstrate the programming of the memristor crossbar array and its operation in vector-by-matrix multiplication with an 87% accuracy.
About the authors
A. Samsonova
Skolkovo Institute of Science and Technology
Email: alena.samsonova@skoltech.ru
Moscow, Russia
S. Yegiyan
Skolkovo Institute of Science and Technology
Email: alena.samsonova@skoltech.ru
Moscow, Russia
O. Klimenko
Skolkovo Institute of Science and Technology; P.N. Lebedev Physical Institute of the Russian Academy of Siences
Email: alena.samsonova@skoltech.ru
Moscow, Russia; Moscow, Russia
V. N. Antonov
Skolkovo Institute of Science and Technology
Email: alena.samsonova@skoltech.ru
Moscow, Russia
G. Paradezhenko
Skolkovo Institute of Science and Technology
Email: alena.samsonova@skoltech.ru
Moscow, Russia
D. Prodan
Skolkovo Institute of Science and Technology
Email: alena.samsonova@skoltech.ru
Moscow, Russia
A. Pervishko
Skolkovo Institute of Science and Technology
Email: alena.samsonova@skoltech.ru
Moscow, Russia
D. Yudin
Skolkovo Institute of Science and Technology
Email: alena.samsonova@skoltech.ru
Moscow, Russia
N. Brilliantov
Skolkovo Institute of Science and Technology
Author for correspondence.
Email: alena.samsonova@skoltech.ru
Moscow, Russia
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