Study of SiO2 films obtained by PECVD and doped with Zn

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Abstract

The results of studying silicon oxide films obtained by plasma enhanced chemical vapor deposition on Si substrates are presented. They were implanted with 64Zn+ ions with an energy of 50 keV (dose 7 × 1016 cm–2) and then annealed in oxygen atmosphere at elevated temperatures. It has been found that after implantation, zinc is distributed in the SiO2 film according to the normal law with a maximum of about 40 nm. After implantation, zinc is in the silicon oxide film both in the metallic phase (closer to the film surface) and in the oxidized state (in the film depth). After annealing up to 800°C, the zinc profile shifts into the film depth; in this case, the zinc is in the film only in the oxidized state. At high temperatures (over 800°C), the zinc profile shifts toward the film surface.

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About the authors

V. V. Privezentsev

National Research Centre “Kurchatov Institute” — Scientific Research Institute for System Analysis

Author for correspondence.
Email: v.privezentsev@mail.ru
Russian Federation, Moscow

A. A. Firsov

National Research Centre “Kurchatov Institute” — Scientific Research Institute for System Analysis

Email: v.privezentsev@mail.ru
Russian Federation, Moscow

V. S. Kulikauskas

Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics

Email: v.privezentsev@mail.ru
Russian Federation, Moscow

V. V. Zatekin

Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics

Email: v.privezentsev@mail.ru
Russian Federation, Moscow

E. P. Kirilenko

Institute of Nanotechnology of Microelectronics RAS

Email: v.privezentsev@mail.ru
Russian Federation, Moscow

A. V. Goryachev

Institute of Nanotechnology of Microelectronics RAS

Email: v.privezentsev@mail.ru
Russian Federation, Moscow

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Supplementary files

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2. Fig. 1. Experimental POR spectra: a – after zinc implantation (1) and after annealing at 600 (2) and 800°C (3); b – zinc zone after implantation (1), after annealing at temperatures of 600 (2) and 800°C (3).

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3. Fig. 2. Calculated profiles of Zn after implantation (1) and after annealing at 600 (2) and 800°C (3).

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4. Fig. 3. Profiles of Si (1), O (2), Zn (3) after implantation (a) and after annealing at 800°C (b).

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5. Fig. 4. Auger spectrum of zinc after implantation at a depth of 30 (a) and 55 nm (b): 1 — experiment and decomposition of curve 1 into components Zn (2) and ZnO (3).

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6. Fig. 5. Auger spectrum of zinc after annealing at 700°C at a depth of 60 nm: 1 - experimental spectrum; components 2 - Zn and 3 - ZnO.

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